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Jpn. J. Appl. Phys., 43 (6B), 3818-3821 (2004) [pdf] | ||
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Molecular Dynamics Simulation at the Early Stage of Thin Film Deposition: Al or Co on Co (111) |
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Sang-Pil Kim, Seung-Cheol Lee, Kwang-Ryeol
Lee and Yong-Chae Chung |
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The growth mechanisms at the early stage of thin film deposition were quantitatively investigated using molecular dynamics method, focused on the case of Al, Co on fcc-Co(111) system. In the case of Al on Co(111), Al adatoms were grown basically by layer-by-layer growth mode. Moreover, these behaviors were become more obviously as increasing the temperature of the substrate from 80 K to 300 K. In the case of Co on Co(111), Co adatoms apparently favored island growth mode at the low incident energy. Increasing the energy, however, the tendency towards layer-by-layer growth mode was highly increased. These could be rationalized by the difference of surface diffusion barriers for each case. | ||
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